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Al₂O₃-doped ESC
Temperature:
temperature-controlled version (non-heating, with a chiller)
Features and applications:
JR type, high adhesion force, with excellent thermal conductivity, low wafer surface temperature rise, a good solution for 8–12” Etch, PVD, and CVD processes.
temperature-controlled version (non-heating, with a chiller)
Features and applications:
JR type, high adhesion force, with excellent thermal conductivity, low wafer surface temperature rise, a good solution for 8–12” Etch, PVD, and CVD processes.
Category:
Product description
Dimensions: 8–12”
Voltage:±1000V
Adhesion:>10gf/c㎡
Temperature:temperature-controlled version (non-heating, with a chiller)
Features and applications: JR type, high adhesion force, with excellent thermal conductivity, low wafer surface temperature rise, a good solution for 8–12” Etch, PVD, and CVD processes.
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